Description

The IRF3205 is an N-channel MOS Field Effect Transistor designed for?high-current switching applications. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This feature, combined with the fast switching speed and ruggedized device design, makes the?IRF3205 Power MOSFET an extremely efficient and reliable device that can be used in a wide range of applications. The IRF3205 can be used in inverter applications,?uninterruptible power supply, hard-switched and high-frequency circuits, and more.
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Features:

Advanced Process Technology
Ultra Low On-Resistance
Fast Switching
Continuous drain current: 110 A
Maximum Drain to source voltage: 55V
Minimum gate threshold voltage: 2V
Fully Avalanche Rated
Low gate charge
Operating Temperature: -55 to 125?C

Packages Includes:
1 x SME IRF3205 MOSFET